ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK R6520ENJTL
ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin D2PAK R6520ENJTL, Package Type: TO-263S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 231 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V