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ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 267 W, MPN: RGS30TSX2DHRC11

GBP 4.52

1

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 555 W, MPN: RGS80TSX2GC11

GBP 5.72

1

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 555 W, MPN: RGS80TSX2DGC11

GBP 7.11

1

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 555 W, MPN: RGS80TSX2DGC11

GBP 8.32

1

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 395 W, MPN: RGS50TSX2GC11

GBP 4.39

1

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 395 W, MPN: RGS50TSX2DGC11

GBP 5.38

1

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 267 W, MPN: RGS30TSX2DGC11

GBP 4.86

1

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 555 W, MPN: RGS80TSX2GC11

GBP 6.68

1

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 395 W, MPN: RGS50TSX2DGC11

GBP 6.29

1

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 395 W, MPN: RGS50TSX2GC11

GBP 5.15

1

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 267 W, MPN: RGS30TSX2DHRC11

GBP 5.30

1

ROHM RGTVX6TS65GC11 IGBT, 144 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTVX6TS65GC11 IGBT, 144 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 404 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 4810pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 5.16

1

ROHM RGTV00TK65GVC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV00TK65GVC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 2890pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.49

1

ROHM RGTV00TK65DGC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV00TK65DGC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 2890pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.56

1

ROHM RGTV60TK65DGVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV60TK65DGVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 76 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 1730pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.67

1

ROHM RGS00TS65HRC11 IGBT, 50 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGS00TS65HRC11 IGBT, 50 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 326 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Automotive Standard: AEC-Q101, Gate Capacitance: 1568pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 5.16

1

ROHM RGTVX6TS65DGC11 IGBT, 144 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTVX6TS65DGC11 IGBT, 144 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 404 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Energy Rating: 119.3mJ, Gate Capacitance: 184pF, Maximum Operating Temperature: 175 °C, Minimum Operating Temperature: -40 °C

GBP 6.14

1

ROHM RGW00TK65GVC11 IGBT, 26 A 1.5 V, 3-Pin TO-3PFM, Through Hole

ROHM RGW00TK65GVC11 IGBT, 26 A 1.5 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 89 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 4200pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.49

1

ROHM SiC N-Channel MOSFET Transistor, 14 A, 1200 V, 3-Pin TO-247 SCT2280KEC

ROHM SiC N-Channel MOSFET Transistor, 14 A, 1200 V, 3-Pin TO-247 SCT2280KEC, Mounting Type: Through Hole, Maximum Drain Source Resistance: 388 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 108 W, Transistor Configuration: Single, Height: 5.03mm, Length: 15.9mm, Maximum Operating Temperature: +175 °C

GBP 6.43

1

ROHM SiC N-Channel MOSFET Transistor, 10 A, 1200 V, 3-Pin TO-247 SCT2450KEC

ROHM SiC N-Channel MOSFET Transistor, 10 A, 1200 V, 3-Pin TO-247 SCT2450KEC, Mounting Type: Through Hole, Maximum Drain Source Resistance: 610 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Height: 5.03mm, Length: 15.9mm, Maximum Operating Temperature: +175 °C

GBP 5.08

1

ROHM SiC N-Channel MOSFET Transistor, 22 A, 1200 V, 3-Pin TO-247 SCT2160KEC

ROHM SiC N-Channel MOSFET Transistor, 22 A, 1200 V, 3-Pin TO-247 SCT2160KEC, Mounting Type: Through Hole, Maximum Drain Source Resistance: 226 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Height: 5.03mm, Length: 15.9mm, Maximum Operating Temperature: +175 °C

GBP 8.58

1

ROHM SiC N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247N SCT3080ALGC11

ROHM SiC N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247N SCT3080ALGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 105.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm

GBP 7.75

1

ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 R6030ENZ4C13

ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 R6030ENZ4C13, Mounting Type: Through Hole, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 305 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Height: 21.25mm

GBP 6.07

1

ROHM N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247G R6020JNZ4C13

ROHM N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247G R6020JNZ4C13, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 7V, Minimum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 252 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Height: 21.25mm

GBP 5.34

1

ROHM N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 R6020KNZ4C13

ROHM N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 R6020KNZ4C13, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 231 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Height: 21.25mm

GBP 4.87

1

Brand

Gender

Merchant

Price (EUR)

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 80 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 50 A 1200 V, 3-Pin TO-247N

ROHM Single IGBT, 30 A 1200 V, 3-Pin TO-247N

ROHM RGTVX6TS65GC11 IGBT, 144 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTV00TK65GVC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV00TK65DGC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV60TK65DGVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGS00TS65HRC11 IGBT, 50 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTVX6TS65DGC11 IGBT, 144 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGW00TK65GVC11 IGBT, 26 A 1.5 V, 3-Pin TO-3PFM, Through Hole

ROHM SiC N-Channel MOSFET Transistor, 14 A, 1200 V, 3-Pin TO-247 SCT2280KEC

ROHM SiC N-Channel MOSFET Transistor, 10 A, 1200 V, 3-Pin TO-247 SCT2450KEC

ROHM SiC N-Channel MOSFET Transistor, 22 A, 1200 V, 3-Pin TO-247 SCT2160KEC

ROHM SiC N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247N SCT3080ALGC11

ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 R6030ENZ4C13

ROHM N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247G R6020JNZ4C13

ROHM N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 R6020KNZ4C13

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