ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 R6030ENZ4C13

ROHM N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-247 R6030ENZ4C13, Mounting Type: Through Hole, Maximum Drain Source Resistance: 130 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 305 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Height: 21.25mm