ROHM P-Channel MOSFET, 18 A, 30 V, 8-Pin HSMT RQ3E075ATTB
ROHM P-Channel MOSFET, 18 A, 30 V, 8-Pin HSMT RQ3E075ATTB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 15 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V