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Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127

Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.6V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 4.7mm

GBP 1.23

1

Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127

Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.6V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 4.7mm

GBP 1.63

1

Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127

Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.6V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 4.7mm

GBP 1.38

1

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16mm

GBP 1.47

1

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16mm

GBP 1.56

1

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16mm

GBP 0.74

1

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.5mm

GBP 1.16

1

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.5mm

GBP 1.31

1

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 211 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.5mm

GBP 0.63

1

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Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127

Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127

Nexperia N-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin TO220 PSMN2R8-40PS,127

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127

Nexperia N-Channel MOSFET, 89 A, 100 V, 3-Pin TO-220AB PSMN9R5-100PS,127

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118

Nexperia N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK PSMN4R6-60BS,118

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