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Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm

GBP 0.13
1

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm

GBP 0.17
1

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115

Nexperia Dual N/P-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 NX1029X,115, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 Ω, 13.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.6mm

GBP 0.28
1

Nexperia BCP68-25,115 NPN Transistor, 2 A, 20 V, 4-Pin SOT-223

Nexperia BCP68-25,115 NPN Transistor, 2 A, 20 V, 4-Pin SOT-223

Nexperia BCP68-25,115 NPN Transistor, 2 A, 20 V, 4-Pin SOT-223, Package Type: SOT-223 (SC-73), Mounting Type: Surface Mount, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 32 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 170 MHz, Dimensions: 1.7 x 6.7 x 3.7mm, Maximum Collector Emitter Saturation Voltage: 0.5 V, Maximum Operating Temperature: +150 °C

GBP 0.11
1