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Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT

Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT, Mounting Type: Surface Mount, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 185 MHz, Dimensions: 1 x 2.2 x 1.35mm, Height: 1mm

GBP 0.22

1

Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT

Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT, Mounting Type: Surface Mount, Maximum Power Dissipation: 415 mW, Minimum DC Current Gain: 100, Transistor Configuration: Single, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 185 MHz, Dimensions: 1 x 2.2 x 1.35mm, Height: 1mm

GBP 0.14

1

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm

GBP 0.08

1

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm

GBP 0.25

1

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 36 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm

GBP 0.24

1

Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT

Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT, Mounting Type: Surface Mount, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 185 MHz, Dimensions: 1 x 2.2 x 1.35mm, Maximum Base Emitter Saturation Voltage: 1.1 V, Maximum Collector Emitter Saturation Voltage: 0.34 V

GBP 0.06

1

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.25V, Minimum Gate Threshold Voltage: 0.75V, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1mm

GBP 0.07

1

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.25V, Minimum Gate Threshold Voltage: 0.75V, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1mm

GBP 0.27

1

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215, Package Type: SOT-23 (TO-236AB), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.25V, Minimum Gate Threshold Voltage: 0.75V, Maximum Power Dissipation: 415 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1mm

GBP 0.28

1

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Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT

Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215

Nexperia P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 PMV32UP,215

Nexperia PBSS5160U,115 PNP Transistor, 1 A, 60 V, 3-Pin UMT

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215

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