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Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount

Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2 kW, Dimensions: 106.4 x 61.4 x 30.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 61.4mm

GBP 141.33

1

Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount

Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2 kW, Dimensions: 106.4 x 61.4 x 30.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 61.4mm

GBP 171.56

1

Infineon FF450R12KT4HOSA1 Series IGBT Module, 580 A 1200 V, 3-Pin 62MM Module, Panel Mount

Infineon FF450R12KT4HOSA1 Series IGBT Module, 580 A 1200 V, 3-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2.4 kW, Dimensions: 106.4 x 61.4 x 30.9mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 138.54

1

Infineon FF450R12KT4HOSA1 Series IGBT Module, 580 A 1200 V, 3-Pin 62MM Module, Panel Mount

Infineon FF450R12KT4HOSA1 Series IGBT Module, 580 A 1200 V, 3-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2.4 kW, Dimensions: 106.4 x 61.4 x 30.9mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 143.08

1

Infineon BFR193E6327HTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

Infineon BFR193E6327HTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 580 mW, Minimum DC Current Gain: 70, Transistor Configuration: Single, Maximum Collector Base Voltage: 20 V, Maximum Operating Frequency: 8 GHz, Dimensions: 2.9 x 1.3 x 1mm

GBP 0.27

1

Infineon BFR193E6327HTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

Infineon BFR193E6327HTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 580 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 20 V, Maximum Operating Frequency: 8 GHz, Dimensions: 2.9 x 1.3 x 1mm, Maximum Operating Temperature: +150 °C

GBP 0.27

1

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Power Dissipation: 580 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 20 V, Maximum Operating Frequency: 8 GHz, Dimensions: 2 x 1.25 x 0.8mm

GBP 0.05

1

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Power Dissipation: 580 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 20 V, Maximum Operating Frequency: 8 GHz, Dimensions: 2 x 1.25 x 0.8mm, Maximum Operating Temperature: +150 °C

GBP 0.05

1

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323, Package Type: SOT-323 (SC-70), Mounting Type: Surface Mount, Maximum Power Dissipation: 580 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 20 V, Maximum Operating Frequency: 8 GHz, Dimensions: 2 x 1.25 x 0.8mm, Maximum Operating Temperature: +150 °C

GBP 0.05

1

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 0.81

1

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 1.47

1

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 1.47

1

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 2.37

1

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 2.00

1

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 2.37

1

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 580 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 5.66

1

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 580 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 5.84

1

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 580 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.3mm

GBP 4.96

1

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Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount

Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount

Infineon FF450R12KT4HOSA1 Series IGBT Module, 580 A 1200 V, 3-Pin 62MM Module, Panel Mount

Infineon FF450R12KT4HOSA1 Series IGBT Module, 580 A 1200 V, 3-Pin 62MM Module, Panel Mount

Infineon BFR193E6327HTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

Infineon BFR193E6327HTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Infineon BFR193WH6327XTSA1 NPN Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin IPAK IRFU6215PBF

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215

Infineon P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK AUIRFR6215

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

Infineon N-Channel MOSFET, 94 A, 200 V, 3-Pin TO-247AC IRFP90N20DPBF

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