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Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 560 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.75V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm

GBP 0.09
1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 560 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.75V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm

GBP 0.32
1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1

Infineon Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 BSD840NH6327XTSA1, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 560 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.75V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.8mm

GBP 0.19
1