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Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V, Height: 9.65mm

GBP 2.28
1

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V, Height: 9.65mm

GBP 3.62
1

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF

Infineon N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRFS3006TRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V, Height: 9.65mm

GBP 3.62
1