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Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL

GBP 4.14

1

Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL

Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.00175 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 2.38

1

Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL

Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.00175 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 4.52

1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220 IPP90R340C3

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220 IPP90R340C3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 208 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.2V, Height: 4.57mm, Length: 10.36mm

GBP 3.34

1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 208 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.1mm

GBP 3.47

1

Infineon N-Channel MOSFET Transistor, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1

Infineon N-Channel MOSFET Transistor, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 208 W, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.1mm, Length: 16.13mm

GBP 3.58

1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 208 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.1mm

GBP 4.22

1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 340 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 3.03

1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 340 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.6V

GBP 2.44

1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.2V

GBP 3.28

1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.2V

GBP 3.86

1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 340 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.6V

GBP 2.66

1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 340 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.2V

GBP 3.28

1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 340 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 3.55

1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 340 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.6V

GBP 3.14

1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 340 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 1.84

1

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Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL

Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL

Infineon N-Channel MOSFET, 340 A, 40 V, 3-Pin D2-Pak AUIRFS3004TRL

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220 IPP90R340C3

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1

Infineon N-Channel MOSFET Transistor, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 IPW90R340C3FKSA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Infineon N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-220FP IPA90R340C3XKSA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Infineon P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

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