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Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF

GBP 2.02

1

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

GBP 1.57

1

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

GBP 7.18

1

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

GBP 2.75

1

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W

GBP 7.83

1

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W

GBP 4.57

1

Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF

Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Maximum Gate Threshold Voltage: 3V, Series: HEXFET

GBP 2.20

1

Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF

Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Maximum Gate Threshold Voltage: 3V, Series: HEXFET

GBP 1.45

1

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0032 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET

GBP 1.08

1

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0032 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Series: HEXFET

GBP 1.72

1

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0029 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS - T

GBP 2.99

1

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0029 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS - T

GBP 1.56

1

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 5.31mm, Length: 15.29mm

GBP 2.33

1

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 5.31mm, Length: 15.29mm

GBP 2.73

1

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743PBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 135 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 0.93

1

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 1.02

1

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 0.68

1

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 135 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 1.35

1

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 135 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm

GBP 1.16

1

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743PBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 135 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 1.25

1

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 1.02

1

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 135 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 0.63

1

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 135 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm

GBP 0.98

1

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB IRFB3306PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB IRFB3306PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.02mm

GBP 1.41

1

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-247AC IRFP3306PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-247AC IRFP3306PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 220 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.7mm

GBP 2.68

1

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Merchant

Price (EUR)

Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon IKQ100N60TXKSA1 IGBT, 160 A 600 V, 3-Pin PG-TO247-3-46

Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF

Infineon N-Channel MOSFET, 160 A, 40 V, 3-Pin D2PAK IRL1404STRLPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 160 A, 25 V, 7-Pin DirectFET MX IRF6795MTRPBF

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

Infineon N-Channel MOSFET, 160 A, 40 V, 7-Pin PG-TO263-7-3 IPB160N04S203ATMA4

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

Infineon N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin I2PAK IRFSL3306PBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB IRFB3306PBF

Infineon N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-247AC IRFP3306PBF

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