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Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 652 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 15.9mm, Width: 5.1mm, Height: 21.1mm, Dimensions: 15.9 x 5.1 x 21.1mm

GBP 9.26

1

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 652 W, Switching Speed: 60kHz, Transistor Configuration: Single, Length: 15.9mm, Width: 5.1mm, Height: 22.5mm, Dimensions: 15.9 x 5.1 x 22.5mm

GBP 9.66

1

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 652 W, Switching Speed: 60kHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 22.5mm, Energy Rating: 4.2mJ, Gate Capacitance: 3269pF, Maximum Operating Temperature: +175 °C

GBP 5.34

1

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 652 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 7.1mJ, Gate Capacitance: 3270pF, Maximum Operating Temperature: +175 °C

GBP 8.66

1

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 652 W, Switching Speed: 60kHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 22.5mm, Energy Rating: 4.2mJ, Gate Capacitance: 3269pF, Maximum Operating Temperature: +175 °C

GBP 5.44

1

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 652 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.1 x 21.1mm, Energy Rating: 7.1mJ, Gate Capacitance: 3270pF, Maximum Operating Temperature: +175 °C

GBP 10.05

1

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Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

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