Infineon N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK IRF3205LPBF
Infineon N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK IRF3205LPBF, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 9.65mm, Length: 10.67mm