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Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1

GBP 6.55

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin PG-TO263 IPB019N08N3GATMA1

GBP 5.20

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110

GBP 5.20

1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1, Package Type: D2PAK 7pin (TO-263 7pin), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0017 Ω, Maximum Gate Threshold Voltage: 4.1V, Series: OptiMOS

GBP 7.15

1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1, Package Type: D2PAK 7pin (TO-263 7pin), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0017 Ω, Maximum Gate Threshold Voltage: 4.1V, Series: OptiMOS

GBP 5.01

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.045 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 4.83

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.045 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 5.68

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin PG-TO263 IPB019N08N3GATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin PG-TO263 IPB019N08N3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0019 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: OptiMOS 3

GBP 5.68

1

Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK IPB010N06NATMA1

Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK IPB010N06NATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 4.2V, Height: 9.45mm, Length: 10.31mm

GBP 5.14

1

Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK IPB010N06NATMA1

Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK IPB010N06NATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 4.2V, Height: 9.45mm, Length: 10.31mm

GBP 6.02

1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB025N10N3GATMA1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB025N10N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 5.13

1

Infineon N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK IPB036N12N3GATMA1

Infineon N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK IPB036N12N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 5.70

1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB025N10N3GATMA1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB025N10N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 6.02

1

Infineon N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK IPB036N12N3GATMA1

Infineon N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK IPB036N12N3GATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 5.70

1

Infineon N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FullPAK Wide Creepage IPB60R040CFD7ATMA1

Infineon N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FullPAK Wide Creepage IPB60R040CFD7ATMA1, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: IPA60R

GBP 4.82

1

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 180 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.87mm, Width: 5.31mm, Height: 20.7mm, Dimensions: 15.87 x 5.31 x 20.7mm, Energy Rating: 2150µJ

GBP 6.24

1

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 180 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Energy Rating: 2150mJ, Gate Capacitance: 1940pF, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.89

1

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 180 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Energy Rating: 2150mJ, Gate Capacitance: 1940pF, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.93

1

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Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin PG-TO263 IPB019N08N3GATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB017N10N5LFATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110

Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin PG-TO263 IPB019N08N3GATMA1

Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK IPB010N06NATMA1

Infineon N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK IPB010N06NATMA1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB025N10N3GATMA1

Infineon N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK IPB036N12N3GATMA1

Infineon N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK IPB025N10N3GATMA1

Infineon N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK IPB036N12N3GATMA1

Infineon N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FullPAK Wide Creepage IPB60R040CFD7ATMA1

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole

Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole

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