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Infineon SiC N-Channel MOSFET, 56 A, 1200 V, 3-Pin PG-TO247-3 IMW120R030M1HXKSA1

Infineon SiC N-Channel MOSFET, 56 A, 1200 V, 3-Pin PG-TO247-3 IMW120R030M1HXKSA1, Maximum Drain Source Resistance: 0.056 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.7V, Series: CoolSiC

GBP 17.59

Infineon SiC N-Channel MOSFET, 56 A, 1200 V, 3-Pin PG-TO247-3 IMW120R030M1HXKSA1

GBP 19.14