Infineon N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB011N04NGATMA1
Infineon N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK IPB011N04NGATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.1 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 4.57mm, Length: 10.31mm