Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1
Infineon N-Channel MOSFET, 300 A, 30 V, 8 + Tab-Pin HSOF IPT004N03LATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 300 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 2.4mm