Infineon N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON BSZ110N06NS3GATMA1
Infineon N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON BSZ110N06NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm