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Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 8.77mm

GBP 1.44

1

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 8.77mm

GBP 1.42

1

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 8.77mm

GBP 1.69

1

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB AUIRF1404

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB AUIRF1404, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm

GBP 2.81

1

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB AUIRF1404

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB AUIRF1404, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm

GBP 1.91

1

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Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB AUIRF1404

Infineon N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB AUIRF1404

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