Pro1.pl | See the cheapest prices and offers on !URL

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247

GBP 2.63

1

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

GBP 2.41

1

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3

GBP 2.86

1

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 231 W

GBP 2.44

1

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 231 W

GBP 2.87

1

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1

GBP 1.86

1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1

GBP 3.84

1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1

GBP 4.17

1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1

GBP 1.28

1

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: 25 V, ±20 V, Maximum Power Dissipation: 200 W

GBP 1.82

1

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: 25 V, ±20 V, Maximum Power Dissipation: 200 W

GBP 3.12

1

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20 V, ±25 V, Maximum Power Dissipation: 394 W

GBP 2.63

1

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20 V, ±25 V, Maximum Power Dissipation: 394 W

GBP 1.53

1

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 1.34

1

Infineon N-Channel MOSFET, 13 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R220M1HXKSA1

Infineon N-Channel MOSFET, 13 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R220M1HXKSA1, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 3.50

1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 1.40

1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 2.77

1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 0.92

1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 3.00

1

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1, Maximum Drain Source Resistance: 99 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 2.03

1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 4.19

1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R350M1HXKSA1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R350M1HXKSA1, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 3.15

1

Infineon N-Channel MOSFET, 19 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R140M1HXKSA1

Infineon N-Channel MOSFET, 19 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R140M1HXKSA1, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V

GBP 4.00

1

Infineon IRG4PH50UPBF IGBT, 45 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH50UPBF IGBT, 45 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.04

1

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.10

1

Brand

Gender

Merchant

Price (EUR)

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247

Infineon IHW25N120E1XKSA1 IGBT, 25 A 1200 V, 3-Pin TO-247

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3

Infineon IKW15N120BH6XKSA1 IGBT, 30 A 1200 V, 3-Pin PG-TO247-3

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

Infineon IHW40N120R5XKSA1 IGBT, 80 A 1200 V, 3-Pin PG-TO247-3

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1

Infineon N-Channel MOSFET, 13 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R220M1HXKSA1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1

Infineon N-Channel MOSFET, 20 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R160P7XKSA1

Infineon N-Channel MOSFET, 13 A, 1200 V, 3-Pin PG-TO247-3 IMW120R220M1HXKSA1

Infineon N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-220 FullPAK IPA60R099P7XKSA1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin PG-TO247-3 IMW120R350M1HXKSA1

Infineon N-Channel MOSFET, 4.7 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R350M1HXKSA1

Infineon N-Channel MOSFET, 19 A, 1200 V, 4-Pin PG-TO247-4 IMZ120R140M1HXKSA1

Infineon IRG4PH50UPBF IGBT, 45 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Powered by Cobiro