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Infineon N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 IPP65R125C7XKSA1

Infineon N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 IPP65R125C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 101 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 1.60

1

Infineon N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 IPP65R125C7XKSA1

Infineon N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 IPP65R125C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 101 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 1.57

1

Infineon N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 IPP65R125C7XKSA1

Infineon N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 IPP65R125C7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 101 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 1.60

1