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Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO

Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO, Mounting Type: Surface Mount, Dimensions: 12.8 x 7.6 x 2.45mm, Maximum Input Voltage: 18 V, Maximum Operating Temperature: +125 °C, Maximum Output Current: 5mA, Maximum Output Voltage: 1.5 V, Minimum Operating Temperature: -40 °C

GBP 2.25

1

Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO

Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO, Mounting Type: Surface Mount, Dimensions: 12.8 x 7.6 x 2.45mm, Maximum Input Voltage: 18 V, Maximum Operating Temperature: +125 °C, Maximum Output Current: 5mA, Maximum Output Voltage: 1.5 V, Minimum Operating Temperature: -40 °C

GBP 1.17

1

Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO

Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO, Mounting Type: Surface Mount, Dimensions: 12.8 x 7.6 x 2.45mm, Length: 12.8mm, Width: 7.6mm, Maximum Input Voltage: 18 V, Maximum Operating Temperature: +125 °C, Maximum Output Current: 5mA, Maximum Output Voltage: 1.5 V, Minimum Operating Temperature: -40 °C

GBP 2.25

1

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 83.95

1

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 93.51

1

Infineon FF150R12KE3GB2HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon FF150R12KE3GB2HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 780 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, MPN: FF150R12KE3G_B2

GBP 85.28

1

Infineon FF150R12KE3GB2HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon FF150R12KE3GB2HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 780 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 29mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, MPN: FF150R12KE3G_B2

GBP 85.34

1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 225 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.90

1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 225 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.73

1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 225 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.50

1

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Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO

Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO

Infineon ICE2HS01GXUMA1 DC-DC, Resonant Mode Controller 225 kHz 20-Pin, DSO

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon FF150R12KS4HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon FF150R12KE3GB2HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon FF150R12KE3GB2HOSA1 Series IGBT Module, 225 A 1200 V, 7-Pin 62MM Module, Panel Mount

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

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