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Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 235 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.8mJ, Gate Capacitance: 1000pF

GBP 3.55

1

Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 235 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.8mJ, Gate Capacitance: 1000pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 3.41

1

Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 235 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 2.8mJ, Gate Capacitance: 1000pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.02

1

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 235 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 1.02mm

GBP 0.14

1

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 235 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 1.02mm

GBP 0.33

1

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 235 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 1.02mm

GBP 0.22

1

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 235 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 2.39mm

GBP 0.83

1

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 235 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 2.39mm

GBP 0.83

1

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 235 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 2.39mm

GBP 0.83

1

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Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon IKW15N120T2FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF

Infineon N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 IRLML0100TRPBF

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF

Infineon N-Channel MOSFET, 13 A, 200 V, 3-Pin IPAK IRFU13N20DPBF

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