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Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

GBP 4.14

1

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN, Fall Time: 50ns

GBP 4.52

1

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN, Fall Time: 50ns

GBP 2.85

1

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3

GBP 2.05

1

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263)

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263), Mounting Type: Surface Mount, Typical Single Supply Voltage: 4.75 → 41 V, Switch Type: Power, Input Signal Type: Single Ended, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Dimensions: 10 x 9.25 x 4.4mm, Length: 10mm, Maximum Power Dissipation: 125 W, Width: 9.25mm

GBP 2.99

1

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 166 W

GBP 1.31

1

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 166 W

GBP 2.24

1

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1

GBP 1.27

1

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.95mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.47

1

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.10

1

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.64

1

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.95mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.48

1

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 15.9mm, Width: 5.3mm, Height: 20.95mm, Dimensions: 15.9 x 5.3 x 20.95mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.25

1

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263)

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263), Mounting Type: Surface Mount, Dimensions: 10 x 9.25 x 4.4mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Single Ended, Length: 10mm, Maximum Power Dissipation: 125 W, Width: 9.25mm

GBP 1.83

1

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263)

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263), Mounting Type: Surface Mount, Dimensions: 10 x 9.25 x 4.4mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Input Signal Type: Single Ended, Length: 10mm, Maximum Power Dissipation: 125 W, Width: 9.25mm

GBP 3.51

1

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Dimensions: 10.36 x 4.57 x 15.95mm, Energy Rating: 0.77mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.17

1

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 166 W, Transistor Configuration: Single, Dimensions: 10.36 x 4.57 x 15.95mm, Energy Rating: 0.77mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.30

1

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.225 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: CoolMOS

GBP 0.93

1

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.225 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: CoolMOS

GBP 1.39

1

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 160 W, Switching Speed: 8 to 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.40

1

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 160 W, Switching Speed: 8 → 30kHz, Transistor Configuration: Single, Length: 15.87mm, Width: 5.31mm, Height: 20.7mm, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +150 °C

GBP 4.49

1

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 160 W, Switching Speed: 8 to 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.31 x 20.7mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.15

1

Infineon BTS441RGATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-263

Infineon BTS441RGATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-263, Switch On Resistance: 37mΩ, Maximum Operating Supply Voltage: 41 V, Maximum Operating Current: 21A, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 10 x 9.25 x 4.4mm

GBP 1.84

1

Infineon BTS428L2ATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-252

Infineon BTS428L2ATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-252, Switch On Resistance: 120mΩ, Maximum Operating Supply Voltage: 41 V, Maximum Operating Current: 5.8A, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 6.5 x 6.22 x 2.3mm

GBP 2.65

1

Infineon BTS441RGATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-263

Infineon BTS441RGATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-263, Switch On Resistance: 37mΩ, Maximum Operating Supply Voltage: 41 V, Maximum Operating Current: 21A, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 10 x 9.25 x 4.4mm

GBP 3.51

1

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Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

Infineon TDA21490AUMA1, 70 A, 4.25 → 16V 41-Pin, PQFN

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263)

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3

Infineon IKW20N60TFKSA1 IGBT, 41 A 600 V, 3-Pin PG-TO247-3

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247, Through Hole

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263)

Infineon BTS441TGATMA1 Multiplexer 4.75 to 41 V, 5-Pin D2PAK (TO-263)

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1

Infineon Dual N-Channel MOSFET Transistor, 41 A, 700 V, 3-Pin PG-TO 220 IPP65R225C7XKSA1

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon IRG4PH40UDPBF IGBT, 41 A 1200 V, 3-Pin TO-247AC, Through Hole

Infineon BTS441RGATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-263

Infineon BTS428L2ATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-252

Infineon BTS441RGATMA1High Side, High Side Switch Power Switch IC 5-Pin, TO-263

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