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Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12

GBP 1.08

1

Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12

Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12, Width: 7.62mm

GBP 1.18

1

Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12

Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12, Width: 7.62mm

GBP 0.88

1

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

GBP 1.52

1

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: SMD, Maximum Drain Source Resistance: 9 mO, Maximum Gate Threshold Voltage: 1V

GBP 1.09

1

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF, Package Type: D2PAK (TO-263), Mounting Type: SMD, Maximum Drain Source Resistance: 9 mO, Maximum Gate Threshold Voltage: 1V

GBP 1.65

1

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1

GBP 2.11

1

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0042 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS-T2

GBP 1.16

1

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0042 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: OptiMOS-T2

GBP 2.30

1

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 8.77mm

GBP 1.67

1

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 8.77mm

GBP 1.45

1

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 8.77mm

GBP 1.72

1

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220 IRL3803VPBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220 IRL3803VPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Forward Diode Voltage: 1.2V, Height: 16.51mm, Length: 10.66mm

GBP 1.14

1

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220 IRL3803VPBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220 IRL3803VPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.5 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Forward Diode Voltage: 1.2V, Height: 16.51mm, Length: 10.66mm

GBP 1.14

1

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 16.06

1

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 30kHz, Transistor Configuration: Single, Length: 15.87mm, Width: 5.13mm, Height: 20.7mm, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C

GBP 9.79

1

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.62

1

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 30kHz, Transistor Configuration: Single, Dimensions: 15.87 x 5.13 x 20.7mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.79

1

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm

GBP 2.33

1

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm

GBP 1.97

1

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.51mm

GBP 1.97

1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101

GBP 0.15

1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101

GBP 0.20

1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Automotive Standard: AEC-Q101

GBP 0.37

1

Infineon 210 A SPNO Solid State Relay, PCB Mount, MOSFET, 400 V Maximum Load

Infineon 210 A SPNO Solid State Relay, PCB Mount, MOSFET, 400 V Maximum Load, Minimum Load Current: 140 A, Series: PVT412, MPN: PVT412S-TPBF

GBP 1.80

1

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Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12

Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12

Infineon XDPS21071XUMA1 140 KHz 7-Pin, PG-DSO-12

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 140 A, 30 V D2PAK IRL3803STRLPBF

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1

Infineon N-Channel MOSFET, 140 A, 80 V, 7-Pin PG-TO263-7-3 IPB140N08S404ATMA1

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220 IRL3803VPBF

Infineon N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220 IRL3803VPBF

Infineon AUIRGP4066D1-E IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon IRGP4066D-EPBF IGBT, 140 A 600 V, 3-Pin TO-247AD, Through Hole

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF

Infineon N-Channel MOSFET, 140 A, 75 V, 3-Pin TO-220AB IRF3808PBF

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1

Infineon P-Channel MOSFET, 140 mA, 250 V, 3-Pin SC-59 BSR92PH6327XTSA1

Infineon 210 A SPNO Solid State Relay, PCB Mount, MOSFET, 400 V Maximum Load

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