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Infineon N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 IPP60R199CPXKSA1

Infineon N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 IPP60R199CPXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.95mm

GBP 1.32

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Infineon N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 IPP60R199CPXKSA1

Infineon N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 IPP60R199CPXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.95mm

GBP 1.38

1

Infineon N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 IPP60R199CPXKSA1

Infineon N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 IPP60R199CPXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.95mm

GBP 2.18

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