Infineon N-Channel MOSFET, 305 A, 60 V, 3-Pin TO-220 IRL60B216
Infineon N-Channel MOSFET, 305 A, 60 V, 3-Pin TO-220 IRL60B216, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V