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IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.30

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.08

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 3.57

1

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.22

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 327 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16mm, Length: 10.66mm

GBP 1.47

1

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.40

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 327 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16mm, Length: 10.66mm

GBP 1.37

1

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 170 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 5.51

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 327 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16mm, Length: 10.66mm

GBP 1.64

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 4.60

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 4.14

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 4.30

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 96 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 2.70

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 96 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 4.03

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 96 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 3.76

1

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IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

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