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IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO264P IXFK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 15.75

1

IXYS N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT227 IXFN170N65X2

IXYS N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT227 IXFN170N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.17 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 28.28

1

IXYS N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXFB150N65X2

IXYS N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXFB150N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 17.70

1

IXYS N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT227 IXFN150N65X2

IXYS N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT227 IXFN150N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 25.99

1

IXYS N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT227 IXFN150N65X2

IXYS N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT227 IXFN150N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 25.62

1

IXYS N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT227 IXFN170N65X2

IXYS N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT227 IXFN170N65X2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.17 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 27.87

1

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 10.55

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.01

1

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 10.88

1

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 330 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 10.88

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.41

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.79

1

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 5 to 30kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Energy Rating: 5.2mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.23

1

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 880 W, Switching Speed: 10 to 30kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 3mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.42

1

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 880 W, Switching Speed: 10 to 30kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 3mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.73

1

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 625 W, Switching Speed: 5 to 30kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Energy Rating: 5.2mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.00

1

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 2.1 kW, Transistor Configuration: Series, Dimensions: 152 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 108.81

1

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 2.1 kW, Transistor Configuration: Series, Dimensions: 152 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 103.38

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 0.68

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.62

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 0.68

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.46

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 0.66

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.66

1

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 9.59

1

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Price (EUR)

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO264P IXFK120N65X2

IXYS N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT227 IXFN170N65X2

IXYS N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXFB150N65X2

IXYS N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT227 IXFN150N65X2

IXYS N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT227 IXFN150N65X2

IXYS N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT227 IXFN170N65X2

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2

IXYS N-Channel MOSFET, 54 A, 650 V, 3-Pin ISOPLUS247 IXTR102N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXFK100N65X2

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