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IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.93

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.48

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.44

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.93

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.61

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.92

1

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.87

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 10.66mm, Width: 4.83mm, Height: 16mm, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C

GBP 4.03

1

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 10.66mm, Width: 4.82mm, Height: 16mm, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +175 °C

GBP 4.87

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Length: 10.66mm, Width: 4.82mm, Height: 16mm, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.35

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Length: 10.66mm, Width: 4.82mm, Height: 16mm, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.61

1

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 740 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.02

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 327 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16mm, Length: 10.66mm

GBP 1.37

1

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 1.92

1

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.06

1

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.95

1

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 740 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 1.88

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 327 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16mm, Length: 10.66mm

GBP 1.47

1

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.44 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.00

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.36

1

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 740 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.02

1

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 327 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 16mm, Length: 10.66mm

GBP 1.64

1

IXYS N-Channel MOSFET, 62 A, 150 V, 3-Pin TO-220 IXTP62N15P

IXYS N-Channel MOSFET, 62 A, 150 V, 3-Pin TO-220 IXTP62N15P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.15mm, Length: 10.66mm

GBP 2.34

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.29

1

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.44 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.62

1

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Price (EUR)

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYP20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 14 A, 600 V, 3-Pin TO-220 IXFP14N60P3

IXYS N-Channel MOSFET, 62 A, 150 V, 3-Pin TO-220 IXTP62N15P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

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