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IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 880 W, Switching Speed: 10 to 30kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 3mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.73

1

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 880 W, Switching Speed: 10 to 30kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Energy Rating: 3mJ, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.42

1

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 15.97

1

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 15.00

1

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 15.79

1

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 5.7mm

GBP 26.16

1

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 5.7mm

GBP 21.02

1

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 570 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.3V, Height: 5.7mm

GBP 25.78

1

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IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P

IXYS N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227B IXFN102N30P

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

IXYS N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

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