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IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.25 x 9.6mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 21.38

1

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 30.36

1

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.25 x 9.6mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 21.89

1

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 31.72

1

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.25 x 9.6mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 21.70

1

IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 450 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 38.2 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 19.92

1

IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole

IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1040 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 18.26

1

IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 80 A 1700 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 80 A 1700 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 680 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.42 x 9.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 29.80

1

IXYS IXYN80N90C3H1 IGBT, 340 A 900 V, 4-Pin SOT-227B, Panel Mount

IXYS IXYN80N90C3H1 IGBT, 340 A 900 V, 4-Pin SOT-227B, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 29.45

1

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 21.49

1

IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 270 A 1700 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 270 A 1700 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 680 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.42 x 9.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 27.79

1

IXYS IXYN80N90C3H1 IGBT, 70 A 900 V, 4-Pin SOT-227B, Panel Mount

IXYS IXYN80N90C3H1 IGBT, 70 A 900 V, 4-Pin SOT-227B, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 27.17

1

IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 450 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 38.2 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 21.18

1

IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole

IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1150 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 17.55

1

IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole

IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1040 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 20.29 x 5.31 x 26.59mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 20.73

1

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 20.76

1

IXYS MMIX1Y100N120C3H1 IGBT, 92 A 1200 V, 24-Pin SMPD, Surface Mount

IXYS MMIX1Y100N120C3H1 IGBT, 92 A 1200 V, 24-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 400 W, Switching Speed: 20 → 50kHz, Transistor Configuration: Single, Length: 25.25mm, Width: 23.25mm, Height: 5.7mm, Dimensions: 25.25 x 23.25 x 5.7mm, Gate Capacitance: 6000pF

GBP 30.59

1

IXYS IXYH25N250CHV IGBT, 95 A 2500 V, 3-Pin TO247HV, Through Hole

IXYS IXYH25N250CHV IGBT, 95 A 2500 V, 3-Pin TO247HV, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Number of Transistors: 1, Transistor Configuration: Single, Dimensions: 16.2 x 5.1 x 23mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 23.59

1

IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 20 to 50kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 31.14

1

IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 690 W, Switching Speed: 5 to 30kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 29.69

1

IXYS IXYH25N250CHV IGBT, 95 A 2500 V, 3-Pin TO247HV, Through Hole

IXYS IXYH25N250CHV IGBT, 95 A 2500 V, 3-Pin TO247HV, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Number of Transistors: 1, Transistor Configuration: Single, Dimensions: 16.2 x 5.1 x 23mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 20.77

1

IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 690 W, Switching Speed: 5 to 30kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 27.39

1

IXYS IXYN100N120C3 IGBT, 152 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN100N120C3 IGBT, 152 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 830 W, Switching Speed: 20 to 50kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 29.04

1

IXYS IXYN100N120C3H1 IGBT, 134 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN100N120C3H1 IGBT, 134 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 690 W, Switching Speed: 20 to 50kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 35.19

1

IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 20 to 50kHz, Transistor Configuration: Single, Dimensions: 38.23 x 25.07 x 9.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 30.34

1

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Price (EUR)

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole

IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 80 A 1700 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN80N90C3H1 IGBT, 340 A 900 V, 4-Pin SOT-227B, Panel Mount

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS IXYN30N170CV1 Dual Emitter IGBT Module, 270 A 1700 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN80N90C3H1 IGBT, 70 A 900 V, 4-Pin SOT-227B, Panel Mount

IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYK100N120C3 IGBT, 188 A 1200 V, 3-Pin TO-264, Through Hole

IXYS IXYB82N120C3H1 IGBT, 164 A 1200 V, 3-Pin PLUS264, Through Hole

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole

IXYS MMIX1Y100N120C3H1 IGBT, 92 A 1200 V, 24-Pin SMPD, Surface Mount

IXYS IXYH25N250CHV IGBT, 95 A 2500 V, 3-Pin TO247HV, Through Hole

IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYH25N250CHV IGBT, 95 A 2500 V, 3-Pin TO247HV, Through Hole

IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN100N120C3 IGBT, 152 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN100N120C3H1 IGBT, 134 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B, Surface Mount

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