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IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.47

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.93

1

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.95

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.93

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.48

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.44

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.30

1

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 2.53

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.92

1

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 3.79

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.08

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 3.57

1

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C

GBP 3.79

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 10.66mm, Width: 4.83mm, Height: 16mm, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C

GBP 4.03

1

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.38

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Length: 10.66mm, Width: 4.82mm, Height: 16mm, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.61

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Length: 10.66mm, Width: 4.82mm, Height: 16mm, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.35

1

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.06

1

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 3.01

1

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 3.16

1

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 480 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.03

1

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 740 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.02

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.36

1

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.44 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.00

1

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXFH34N50P3

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXFH34N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 175 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 695 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.46mm, Length: 16.26mm

GBP 2.49

1

Brand

Gender

Merchant

Price (EUR)

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXYH20N120C3 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 IXFP12N50P

IXYS N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P

IXYS N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 IXFP10N60P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

IXYS N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXFH34N50P3

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