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IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 0.68

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.62

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 0.68

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.46

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 0.66

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.66

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.17

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.17

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.66

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 4.14

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 4.30

1

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.09

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.91

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.49

1

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.42

1

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.42

1

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 0.42

1

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin TO-220 IXTP2N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin TO-220 IXTP2N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.39

1

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 850 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 80 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.39

1

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.67

1

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 850 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 80 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.30

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 96 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 4.03

1

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 1.67

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 96 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 3.76

1

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 96 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 2.70

1

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IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin DPAK IXTY8N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXFH34N65X2

IXYS N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2

IXYS N-Channel MOSFET, 2 A, 650 V, 3-Pin TO-220 IXTP2N65X2

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

IXYS N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXTH34N65X2

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