IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M
IXYS N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220F IXTP8N65X2M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V