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IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 33.20

1

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 33.09

1

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 29.78

1

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 26.22

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.66

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.62

1

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 145 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 390 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.46

1

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 3.55

1

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 1.99

1

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 3.17

1

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 2.33

1

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 3.55

1

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 2.87

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.95

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.58

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.40

1

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IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227B IXTN22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L

IXYS N-Channel MOSFET, 22 A, 1000 V, 3-Pin TO-264 IXTK22N100L

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-220AB IXFP22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

IXYS N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247 IXFH22N60P3

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

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