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IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 10.62

1

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 7.23

1

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 12.05

1

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.39

1

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 195 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 7.83

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.11

1

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 195 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 8.88

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.03

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.93

1

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.93

1

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.25 x 9.6mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 21.70

1

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 31.72

1

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 12.83

1

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.47

1

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 325 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 7.23

1

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.31mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.52

1

IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole

IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 16.85

1

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.31mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.40

1

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 30.36

1

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 11.32

1

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 290 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.25 x 9.6mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 21.89

1

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 85 W, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 2.95

1

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Dimensions: 38.23 x 25.25 x 9.6mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 14.33

1

IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole

IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 15.07

1

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Dimensions: 10.66 x 4.82 x 16mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 3.44

1

Brand

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Merchant

Price (EUR)

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA55I1200HJ IGBT, 84 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA37IF1200HJ IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA12IF1200PB IGBT, 20 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYX25N250CV1HV IGBT, 95 A 2500 V, 3-Pin PLUS247, Through Hole

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXA12IF1200HB IGBT, 20 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXA70I1200NA IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

IXYS IXYX30N170CV1 IGBT, 100 A 1700 V, 3-Pin PLUS247, Through Hole

IXYS IXA20I1200PB IGBT, 38 A 1200 V, 3-Pin TO-220, Through Hole

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