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IXYS 1200V 110A, Diode, 2-Pin DO-203AB DS75-12B

IXYS 1200V 110A, Diode, 2-Pin DO-203AB DS75-12B, Mounting Type: Thread Mount, Diode Configuration: Stud Anode, Maximum Forward Voltage Drop: 1.17V, Diode Technology: Silicon Junction, Peak Non-Repetitive Forward Surge Current: 1.5kA

GBP 24.73

1

IXYS 1200V 110A, Diode, 2-Pin DO-203AB DS75-12B

IXYS 1200V 110A, Diode, 2-Pin DO-203AB DS75-12B, Mounting Type: Thread Mount, Diode Configuration: Stud Anode, Maximum Forward Voltage Drop: 1.17V, Diode Technology: Silicon Junction, Peak Non-Repetitive Forward Surge Current: 1.5kA

GBP 19.89

1

IXYS 1500V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC150

IXYS 1500V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC150, Mounting Type: Capsule, Diode Configuration: Single, Maximum Forward Voltage Drop: 400mV, Diameter: 42mm, Peak Non-Repetitive Forward Surge Current: 9kA

GBP 51.72

1

IXYS 1200V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC120

IXYS 1200V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC120, Mounting Type: Capsule, Diode Configuration: Single, Maximum Forward Voltage Drop: 1V, Diameter: 42mm, Peak Non-Repetitive Forward Surge Current: 9kA

GBP 53.63

1

IXYS 1500V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC150

IXYS 1500V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC150, Mounting Type: Capsule, Diode Configuration: Single, Maximum Forward Voltage Drop: 400mV, Diameter: 42mm, Peak Non-Repetitive Forward Surge Current: 9kA

GBP 60.21

1

IXYS 1200V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC120

IXYS 1200V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC120, Mounting Type: Capsule, Diode Configuration: Single, Maximum Forward Voltage Drop: 1V, Diameter: 42mm, Peak Non-Repetitive Forward Surge Current: 9kA

GBP 50.51

1

IXYS 800V 49A, Silicon Junction Diode, 2-Pin DO-203AB DSI35-08A

IXYS 800V 49A, Silicon Junction Diode, 2-Pin DO-203AB DSI35-08A, Mounting Type: Thread Mount, Diode Configuration: Stud Cathode, Maximum Forward Voltage Drop: 1.55V, Peak Non-Repetitive Forward Surge Current: 690A

GBP 11.16

1

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 11.93

1

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1250 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 13.52

1

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1.25 kW, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C

GBP 12.13

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.40

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.58

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.95

1

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 680 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 13.62

1

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 680 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 16.30

1

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 680 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.6mm, Length: 38.23mm

GBP 16.12

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.63

1

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227B IXFN200N10P

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227B IXFN200N10P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 680 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.5V, Height: 9.6mm

GBP 16.29

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.23

1

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227B IXFN200N10P

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227B IXFN200N10P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 680 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.5V, Height: 9.6mm

GBP 15.33

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.63

1

IXYS N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXFH74N20P

IXYS N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXFH74N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 34 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 480 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.24

1

IXYS N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXFH74N20P

IXYS N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXFH74N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 34 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 480 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 3.96

1

IXYS N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P

IXYS N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 9.15mm, Length: 10.66mm

GBP 2.27

1

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.67

1

Brand

Gender

Merchant

Price (EUR)

IXYS 1200V 110A, Diode, 2-Pin DO-203AB DS75-12B

IXYS 1200V 110A, Diode, 2-Pin DO-203AB DS75-12B

IXYS 1500V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC150

IXYS 1200V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC120

IXYS 1500V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC150

IXYS 1200V 945A, Silicon Junction Diode, 2-Pin DO-200AA W0944WC120

IXYS 800V 49A, Silicon Junction Diode, 2-Pin DO-203AB DSI35-08A

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P

IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227B IXFN140N20P

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227B IXFN200N10P

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227B IXFN200N10P

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXFH74N20P

IXYS N-Channel MOSFET, 74 A, 200 V, 3-Pin TO-247 IXFH74N20P

IXYS N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

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