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IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.92

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.61

1

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 180 W, Switching Speed: 20kHz, Transistor Configuration: Single, Length: 10.66mm, Width: 4.83mm, Height: 16mm, Dimensions: 10.66 x 4.83 x 16mm, Maximum Operating Temperature: +150 °C

GBP 4.03

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.49

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 1.91

1

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 2.66

1

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IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

IXYS N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-247 IXTH12N65X2

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