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IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 14.29

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.38

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.88

1