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IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 13.49

1

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 13.08

1

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 12.63

1

IXYS N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT227 IXFN110N85X

IXYS N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT227 IXFN110N85X, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.17 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 34.39

1

IXYS N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT227 IXFN110N85X

IXYS N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT227 IXFN110N85X, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.17 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 35.29

1

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 480 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.30

1

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 480 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.03

1

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 480 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.02

1

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 694 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 21.46mm

GBP 4.71

1

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 694 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 21.46mm

GBP 4.97

1

IXYS MDI200-12A4 Single IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Panel Mount

IXYS MDI200-12A4 Single IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 110 x 62 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

GBP 83.21

1

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 110 x 62 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

GBP 97.96

1

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 110 x 62 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

GBP 81.82

1

IXYS MDI200-12A4 Single IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Panel Mount

IXYS MDI200-12A4 Single IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Dimensions: 110 x 62 x 30mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

GBP 75.66

1

IXYS MII400-12E4, Y3 Li, N-Channel Series IGBT Module, 420 A max, 1200 V, Screw Mount

IXYS MII400-12E4, Y3 Li, N-Channel Series IGBT Module, 420 A max, 1200 V, Screw Mount, Maximum Gate Emitter Voltage: ±20V, Pin Count: 7, Dimensions: 110 x 62 x 28.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

GBP 133.77

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.36

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.29

1

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm, Length: 10.66mm

GBP 2.46

1

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Merchant

Price (EUR)

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT227 IXFN110N85X

IXYS N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT227 IXFN110N85X

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 IXFH110N10P

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

IXYS MDI200-12A4 Single IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Panel Mount

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

IXYS MDI200-12A4 Single IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Panel Mount

IXYS MII400-12E4, Y3 Li, N-Channel Series IGBT Module, 420 A max, 1200 V, Screw Mount

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

IXYS N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXTP36N30P

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