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IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 12.09

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.58

1

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 14.32

1

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 13.72

1

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 16.24

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.74

1

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.08

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.30

1

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.96

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.08

1

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 540 W, Switching Speed: 40kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 3.57

1

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +175 °C

GBP 7.45

1

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.25V, Height: 5.7mm

GBP 12.76

1

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.25V, Height: 5.7mm

GBP 13.16

1

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.25V, Height: 5.7mm

GBP 11.81

1

IXYS 75 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS 75 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET, Terminal Type: PCB Pin, Package Style: SOP, Maximum Turn On Time: 10 ms, Dimensions: 4.089 x 3.81 x 2.1203mm, Capacitance: 5pF, Depth: 3.81mm, Height: 2.12mm, Length: 4.09mm, Off State Leakage Current: 1 μA, MPN: CPC1006N

GBP 0.59

1

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 25 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.15mm, Maximum Operating Temperature: +175 °C

GBP 2.46

1

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 25 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.15mm, Maximum Operating Temperature: +175 °C

GBP 2.46

1

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 25 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 360 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.15mm, Maximum Operating Temperature: +175 °C

GBP 2.29

1

IXYS 75 mA rms/mA dc SP-NC Solid State Relay, DC, Surface Mount, MOSFET

IXYS 75 mA rms/mA dc SP-NC Solid State Relay, DC, Surface Mount, MOSFET, Terminal Type: PCB Pin, Package Style: SOP, Maximum Turn On Time: 10 ms, Dimensions: 4.089 x 3.81 x 2.1203mm, Capacitance: 10pF, Depth: 3.81mm, Height: 2.12mm, Length: 4.09mm, Off State Leakage Current: 1 μA, MPN: CPC1106N

GBP 0.93

1

IXYS N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227B IXFN82N60P

IXYS N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227B IXFN82N60P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 22.53

1

IXYS N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227B IXFN82N60P

IXYS N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227B IXFN82N60P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.04 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.6mm, Length: 38.2mm

GBP 22.86

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 23.17

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 22.11

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 21.14

1

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Price (EUR)

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

IXYS IXYH30N120C3 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

IXYS N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

IXYS 75 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P

IXYS N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P

IXYS 75 mA rms/mA dc SP-NC Solid State Relay, DC, Surface Mount, MOSFET

IXYS N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227B IXFN82N60P

IXYS N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227B IXFN82N60P

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

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