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IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 5.7mm

GBP 27.04

1

IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 5.7mm

GBP 26.64

1

IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Maximum Power Dissipation: 830 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 5.7mm

GBP 26.11

1

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Transistor Configuration: Single, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.50

1

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole, Transistor Configuration: Single, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.69

1

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount, Transistor Configuration: Single, Dimensions: 16.05 x 14 x 5.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.41

1

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 12.09

1

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.58

1

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.49

1

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 12.97

1

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.82

1

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.83

1

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 14.32

1

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount, Transistor Configuration: Single, Length: 16.05mm, Width: 14mm, Height: 5.1mm, Dimensions: 16.05 x 14 x 5.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 7.43

1

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 19.91 x 5.03 x 20.88mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 6.31

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.03

1

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 150 W, Transistor Configuration: Series, Dimensions: 25 x 23 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.11

1

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B, Diode Configuration: Single, Mounting Type: Through Hole, Number of Elements per Chip: 1, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 2.51V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C

GBP 3.51

1

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B, Diode Configuration: Single, Mounting Type: Through Hole, Number of Elements per Chip: 1, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 2.51V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C

GBP 3.51

1

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B, Diode Configuration: Single, Mounting Type: Through Hole, Number of Elements per Chip: 1, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 2.51V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C

GBP 3.16

1

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 13.72

1

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.57

1

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.87

1

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.31mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.40

1

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole, Maximum Gate Emitter Voltage: ±20 V, ±30V, Maximum Power Dissipation: 937 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.34mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 12.83

1

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IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

IXYS N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH100N30C3 IGBT, 75 A 300 V, 3-Pin TO-247AD, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH24N170 IGBT, 50 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH16N170 IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

IXYS FII30-06D IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC, Through Hole

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS IXA30PG1200DHGLB IGBT, 43 A 1200 V, 9-Pin SMPD, Surface Mount

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B

IXYS Switching Diode, 2-Pin TO-247AC DSEP30-06B

IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole

IXYS IXYH24N170C IGBT, 58 A 1700 V, 3-Pin TO247AD, Through Hole

IXYS IXYH30N170C IGBT, 100 A 1700 V, 3-Pin TO247AD, Through Hole

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