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Toshiba N-Channel MOSFET, 393 A, 30 V, 8-Pin SOP TPHR6503PL

Toshiba N-Channel MOSFET, 393 A, 30 V, 8-Pin SOP TPHR6503PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 890 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.70

1

Toshiba N-Channel MOSFET, 393 A, 30 V, 8-Pin SOP TPHR6503PL

Toshiba N-Channel MOSFET, 393 A, 30 V, 8-Pin SOP TPHR6503PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 890 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.68

1

Toshiba N-Channel MOSFET, 393 A, 30 V, 8-Pin SOP TPHR6503PL

Toshiba N-Channel MOSFET, 393 A, 30 V, 8-Pin SOP TPHR6503PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 890 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 1.37

1