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Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10μA, 2-Pin DO-15

Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10µA, 2-Pin DO-15

GBP 0.42

1

Toshiba 1ZB36(Q), Zener Diode, TVS, Regulator 36V ±10% 1 W 10μA, 2-Pin 3-3F2A

Toshiba 1ZB36(Q), Zener Diode, TVS, Regulator 36V ±10% 1 W 10µA, 2-Pin 3-3F2A

GBP 0.32

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 1.68

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.56

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.47

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.93

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.41

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 4.10

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.83

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.22

1

Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN

Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 100 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 1.08

1

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 0.4µs, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Gate Capacitance: 1500pF, Maximum Operating Temperature: +175 °C

GBP 2.80

1

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 2.70

1

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 2.40

1

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 375 W, Switching Speed: 0.55µs, Transistor Configuration: Single, Dimensions: 15.5 x 4.5 x 20mm, Gate Capacitance: 4500pF, Maximum Operating Temperature: 175 °C

GBP 3.13

1

Toshiba 2SC5949-O(Q) NPN Transistor, 15 A, 200 V, 3-Pin TO-3PL

Toshiba 2SC5949-O(Q) NPN Transistor, 15 A, 200 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 220 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 5.2 x 26 x 20.5mm, Height: 5.2mm

GBP 3.17

1

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 4.8mm, Height: 20mm, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature: +150 °C

GBP 2.43

1

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 3.49

1

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 230 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.5mm, Width: 4.5mm, Height: 20mm, Dimensions: 15.5 x 4.5 x 20mm, Maximum Operating Temperature: +175 °C

GBP 2.60

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.04

1

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F SSM3K339R

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F SSM3K339R, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 390 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Height: 0.7mm

GBP 0.08

1

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F SSM3K339R

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F SSM3K339R, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 390 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Height: 0.7mm

GBP 0.09

1

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 45 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.40

1

Brand

Gender

Merchant

Price (EUR)

Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10μA, 2-Pin DO-15

Toshiba 1ZB36(Q), Zener Diode, TVS, Regulator 36V ±10% 1 W 10μA, 2-Pin 3-3F2A

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN

Toshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P, Through Hole

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P, Through Hole

Toshiba 2SC5949-O(Q) NPN Transistor, 15 A, 200 V, 3-Pin TO-3PL

Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F SSM3K339R

Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F SSM3K339R

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

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