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STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 5.3mm, Height: 20.3mm, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C

GBP 10.11

1

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.70

1

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 11.00

1

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 417 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm, Length: 15.75mm, Maximum Operating Temperature: +150 °C

GBP 8.97

1

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60ND

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60ND, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 8.89

1

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 417 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 9.34

1

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 417 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 10.16

1

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STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60ND

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60

STMicroelectronics N-Channel MOSFET, 45 A, 600 V, 3-Pin TO-247 STW45NM60

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