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STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 630 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.6V

GBP 6.06
1

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 630 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.6V

GBP 7.04
1

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5

STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 630 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V, Number of Elements per Chip: 1, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.6V

GBP 4.30
1