ROHM SiC N-Channel MOSFET, 17 A, 1200 V, 3-Pin TO-247N SCT3160KLGC11 ROHM SiC N-Channel MOSFET, 17 A, 1200 V, 3-Pin TO-247N SCT3160KLGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 103 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm GBP 6.87 1
ROHM SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N SCT3120ALGC11 ROHM SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N SCT3120ALGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 158.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 103 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm GBP 5.53 1
