MagnaChip P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC MDS3603URH
MagnaChip P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC MDS3603URH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Forward Diode Voltage: 1V, Height: 1.5mm